| PART |
Description |
Maker |
| 1N7037CCU1 JANTXV1N7037CCU1 JAN1N7037CCU1 |
SILICON DUAL SCHOTTKY POWER RECTIFIER 35 Amp, 100 Volt
|
Microsemi Corporation
|
| HER202G HER201G |
Passivated High Efficient Rectifiers 50 to 1000 Volts 2.0 Amp Glass 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
Micro Commercial Components, Corp.
|
| MMBD914 |
350mW 100 Volt Silicon Epitaxial Diode
|
Micro Commercial Components
|
| MMBD4148 |
350mW 100 Volt Silicon Epitaxial Diode
|
MCC[Micro Commercial Components]
|
| LT1003 LT1003C LT1003CK LT1003M LT1003MK |
From old datasheet system
5 Volt, 5 Amp Voltage Regulator
5 Volt / 5 Amp Voltage Regulator
DFK-MSTB 2,5/12-G WW(1X1) 5 V FIXED POSITIVE REGULATOR, MBFM2
|
LINER[Linear Technology]
Linear Technology Corporation
Linear Technology, Corp.
|
| X28HC64SIZ-12 X28HC64SIZ-70 X28HC64J-12 X28HC64JIZ |
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 32-PLCC T&R 8K X 8 EEPROM 5V, 90 ns, PQCC32
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC T&R 8K X 8 EEPROM 5V, 120 ns, PDSO28
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: 0°C to 70°C; Package: 28-PDIP 8K X 8 EEPROM 5V, 90 ns, PDIP28
64K, 8K x 8 Bit; 5 Volt, Byte Alterable EEPROM; Temperature Range: -40°C to 85°C; Package: 28-SOIC 8K X 8 EEPROM 5V, 70 ns, PDSO28
|
Intersil Corporation
http://
Intersil, Corp.
|
| 2SC2356 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
|
Fujitsu Component Limited.
FUJITSU[Fujitsu Media Devices Limited]
|
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| 1N1190 JANTXV1N3768R 1N1184 1N1184R 1N1186 1N1186R |
Standard Rectifier (trr more than 500ns)
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-SOIC -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AB
Single Wide-Bandwidth High-Output Drive Single-Supply Op Amp With Shutdown 8-SOIC 0 to 70 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 20-HTSSOP -40 to 125 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
|
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| KSH117TF KSH117ITU |
PNP Silicon Darlington Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-252
2 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-251 IPAK-3
|
Fairchild Semiconductor, Corp.
|
| SED20HB100 |
20 AMP 100 VOLTS SCHOTTKY RECTIFIER 20 A, 100 V, SILICON, RECTIFIER DIODE
|
NXP Semiconductors N.V.
|
|
